According to the latest report, TSMC and Samsung Electronics, which have been in mass production of the 5nm process for two years, are both making every effort to promote the mass production of the 3nm process, and both companies plan to mass production this year.
Moreover, Samsung Electronics is expected to announce the mass production of the 3nm process technology next week. If Samsung Electronics really announces the mass production of the 3nm process next week, as reported by the source, they will achieve mass production before TSMC in this process technology. TSMC’s 3nm process started risk trial production last year and is progressing to mass production in the second half of this year as planned.
In terms of the highly competitive 3nm process technology, Samsung Electronics and TSMC have different technical routes. Samsung Electronics took the lead in using full-surround gate transistors, while TSMC continued to use the FinFET architecture.
The sources mentioned in the report that Samsung Electronics has previously stated that the 3nm process technology using full surround gate transistor technology will improve performance by 30% and reduce energy consumption by 50% compared with the current fin field effect transistor architecture. The logic area efficiency is improved by more than 45%.
Samsung Electronics’ 3nm process technology is expected to be ahead of TSMC’s production, which also appeared in early May. At that time, some sources reported that Samsung was promoting the mass production of the 3nm process in the second quarter.
If it can be successfully realized, it will be produced before TSMC. The second quarter will end next Thursday. If Samsung Electronics wants to mass-produce in the second quarter, it needs to mass-produce it before next Thursday.