Samsung Electronics, a leading supplier of advanced storage technology, recently announced the mass production of the industry’s smallest 14-nanometer (nm) DRAM based on advanced ultraviolet (EUV) technology.
Following the launch of the first EUV DRAM industrial company in March last year, Samsung has upgraded the number of EUV layers to five to provide today’s most advanced and highly developed DRAM technology through its DDR5 solution.
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As the range of DRAM continues to shrink by 10 nanometers, EUV technology is becoming more and more important for improving the accuracy and high yield of high-performance measurement.
By using five EUV layers in its 14nm DRAM, Samsung has achieved a huge size of approximately 20% while developing a complete product. In addition, compared with the previous generation of DRAM nodes, the 14nm process can help reduce power consumption by about 20%.
Using the latest DDR5 grade, Samsung’s 14-nanometer DRAM will help unlock unprecedented speeds of up to 7.2 gigabits per second (Gbps), which is twice the speed of DDR4 up to 3.2Gbps.
Samsung plans to expand its 14nm DDR5 product portfolio to support data centers, supercomputer applications, and business services. In addition, Samsung expects to increase its 14nm DRAM chip density to 24Gb to better meet the rapidly growing data needs of global IT systems.
